-40%
MJE15030G + MJE15031G Pair TO-220 MJE15030 MJE15031 Power Transistors USA

MJE15030G + MJE15031G Pair TO-220 MJE15030 MJE15031 Power Transistors USA

$ 1.91

Availability: 50 in stock
  • Collector-Base/Gate-Source Voltage: 150V
  • Country/Region of Manufacture: China
  • Model: MJE15030G + MJE15031G
  • MPN: MJE15030G + MJE15031G
  • Item must be returned within: 30 Days
  • Refund will be given as: Money Back
  • Return shipping will be paid by: Seller
  • Function: High Frequency/RF Transistor
  • Transistor Type: NPN PNP BJT
  • Condition: New
  • Power Dissipation: 50W
  • Emitter-Base/Gate-Drain Voltage: 5V
  • Collector-Emitter/Drain-Source Voltage: 150V
  • All returns accepted: Returns Accepted
  • Brand: Unbranded
  • Continuous Collector/Drain Current: 8A

    Description

    MJE15030G
    Material of Transistor: Si
    Polarity: NPN
    Maximum Collector Power Dissipation (Pc): 50 W
    Maximum Collector-Base Voltage |Vcb|: 150 V
    Maximum Collector-Emitter Voltage |Vce|: 150 V
    Maximum Emitter-Base Voltage |Veb|: 5 V
    Maximum Collector Current |Ic max|: 8 A
    Max. Operating Junction Temperature (Tj): 150 °C
    Transition Frequency (ft): 30 MHz
    Forward Current Transfer Ratio (hFE), MIN: 40
    MJE15031G
    Material of Transistor: Si
    Polarity: PNP
    Maximum Collector Power Dissipation (Pc): 50 W
    Maximum Collector-Base Voltage |Vcb|: 150 V
    Maximum Collector-Emitter Voltage |Vce|: 150 V
    Maximum Emitter-Base Voltage |Veb|: 5 V
    Maximum Collector Current |Ic max|: 8 A
    Max. Operating Junction Temperature (Tj): 150 °C
    Transition Frequency (ft): 30 MHz
    Forward Current Transfer Ratio (hFE), MIN: 40
    Package: TO220
    Package Included:
    MJE15030G + MJE15031G Pair TO-220 MJE15030 MJE15031 Power Transistors